ZXTN2011ZTA Transistor Datasheet

NPN BJT | DIODES

NPNSOT-89High Power
VCEO
100V
Ic Max
4.5A
Pd Max
2.1W
Gain
100
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Quick Reference

The ZXTN2011ZTA is a NPN bipolar transistor in a SOT-89 package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 4.5A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO100VBreakdown voltage
IC Max4.5ACollector current
Pd Max2.1WPower dissipation
Gain100DC current gain
Frequency130MHzTransition frequency
VCE(sat)115mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BCX56-16 NPN SOT-89 80V 1A 1.3W
BCX56-16 NPN SOT-89 80V 1A 1.3W
BCX56 NPN SOT-89 80V 1A 1.3W
BCX56-16 NPN SOT-89 80V 1A 1.3W
NTE2428-HXY NPN SOT-89 80V 1A 500mW
BCX56-16 NPN SOT-89 80V 1A 1.3W
DXTN26070CY-13 NPN SOT-89 70V 2A 2W
BCX56-16 NPN SOT-89 80V 1A 1.3W
H2SD1898T100R NPN SOT-89 80V 1A 500mW
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