2SD1816G-S-TN3-R Transistor Datasheet

NPN BJT | UTC

NPNTO-252-2(DPAK)High Power
VCEO
100V
Ic Max
4A
Pd Max
25W
Gain
560
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Quick Reference

The 2SD1816G-S-TN3-R is a NPN bipolar transistor in a TO-252-2(DPAK) package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 4A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageTO-252-2(DPAK)Physical mounting form factor
VCEO100VBreakdown voltage
IC Max4ACollector current
Pd Max25WPower dissipation
Gain560DC current gain
Frequency180MHzTransition frequency
VCE(sat)400mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD122T4 NPN TO-252-2(DPAK) 100V 8A 20W
View all TO-252-2(DPAK) NPN Transistors ›