MJD122T4 Transistor Datasheet

NPN BJT | ST

NPNTO-252-2(DPAK)High Power
VCEO
100V
Ic Max
8A
Pd Max
20W
Gain
1000
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Quick Reference

The MJD122T4 is a NPN bipolar transistor in a TO-252-2(DPAK) package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 8A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-252-2(DPAK)Physical mounting form factor
VCEO100VBreakdown voltage
IC Max8ACollector current
Pd Max20WPower dissipation
Gain1000DC current gain
Frequency-Transition frequency
VCE(sat)4VSaturation voltage
Vebo-Emitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SD1816G-S-TN3-R NPN TO-252-2(DPAK) 100V 4A 25W
View all TO-252-2(DPAK) NPN Transistors ›