BC856BS Transistor Datasheet

PNP BJT | FUXINSEMI

PNPSOT-363General Purpose
VCEO
65V
Ic Max
100mA
Pd Max
200mW
Gain
200
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Quick Reference

The BC856BS is a PNP bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of 65V and continuous collector current of 100mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFUXINSEMIOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO65VBreakdown voltage
IC Max100mACollector current
Pd Max200mWPower dissipation
Gain200DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo100MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
TPMMDT2907A PNP SOT-363 60V 600mA 200mW
BC856BDW1T1G-HYX PNP SOT-363 65V 100mA 200mW
AD-BC856S PNP SOT-363 65V 100mA 0.2mW
BC856S(RANGE:110-475) PNP SOT-363 65V 100mA 200mW
BC856DW PNP SOT-363 65V 100mA 200mW
View all SOT-363 PNP Transistors ›