BC856DW Transistor Datasheet

PNP BJT | CBI

PNPSOT-363General Purpose
VCEO
65V
Ic Max
100mA
Pd Max
200mW
Gain
110
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Quick Reference

The BC856DW is a PNP bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of 65V and continuous collector current of 100mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerCBIOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO65VBreakdown voltage
IC Max100mACollector current
Pd Max200mWPower dissipation
Gain110DC current gain
Frequency100MHzTransition frequency
VCE(sat)300mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
TPMMDT2907A PNP SOT-363 60V 600mA 200mW
BC856BDW1T1G-HYX PNP SOT-363 65V 100mA 200mW
AD-BC856S PNP SOT-363 65V 100mA 0.2mW
BC856S(RANGE:110-475) PNP SOT-363 65V 100mA 200mW
BC856BS PNP SOT-363 65V 100mA 200mW
View all SOT-363 PNP Transistors ›