BC857S Transistor Datasheet

PNP BJT | HT(Shenzhen Jinyu Semicon)

PNPSOT-363General Purpose
VCEO
45V
Ic Max
200mA
Pd Max
300mW
Gain
-
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Quick Reference

The BC857S is a PNP bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of 45V and continuous collector current of 200mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHT(Shenzhen Jinyu Semicon)Original Manufacturer
PackageSOT-363Physical mounting form factor
VCEO45VBreakdown voltage
IC Max200mACollector current
Pd Max300mWPower dissipation
Gain-DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo200MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MBT3906DW1T1G-HXY PNP SOT-363 40V 200mA 200mW
MMDT3906 PNP SOT-363 40V 200mA 200mW
MMBT3906WH PNP SOT-363 40V 200mA 200mW
BCM857BS PNP SOT-363 45V 200mA 300mW
MMDT3906 PNP SOT-363 40V 200mA 200mW
BC857BS PNP SOT-363 45V 200mA 300mW
MMDT3906DW PNP SOT-363 40V 200mA 200mW
BC857BS PNP SOT-363 45V 200mA 300mW
BCM857BS PNP SOT-363 45V 200mA 300mW
BC857BS PNP SOT-363 45V 200mA 300mW
View all SOT-363 PNP Transistors ›