BD238 Transistor Datasheet

PNP BJT | HXY MOSFET

PNPTO-126General Purpose
VCEO
100V
Ic Max
1.5A
Pd Max
1W
Gain
250@0.1A,2V
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Quick Reference

The BD238 is a PNP bipolar transistor in a TO-126 package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 1.5A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting form factor
VCEO100VBreakdown voltage
IC Max1.5ACollector current
Pd Max1WPower dissipation
Gain250@0.1A,2VDC current gain
Frequency50MHzTransition frequency
VCE(sat)500mV@2A,0.2ASaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJE172 PNP TO-126 80V 3A 12.5W
BD140 NPN TO-126 80V 1.5A 1W
BD680ASTU-HXY PNP TO-126 80V 4A 2W
View all TO-126 PNP Transistors ›