BD680ASTU-HXY Transistor Datasheet

PNP BJT | HXY MOSFET

PNPTO-126General Purpose
VCEO
80V
Ic Max
4A
Pd Max
2W
Gain
15000@2A,5V
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Quick Reference

The BD680ASTU-HXY is a PNP bipolar transistor in a TO-126 package, designed for general purpose applications. It supports a breakdown voltage of 80V and continuous collector current of 4A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting form factor
VCEO80VBreakdown voltage
IC Max4ACollector current
Pd Max2WPower dissipation
Gain15000@2A,5VDC current gain
Frequency-Transition frequency
VCE(sat)1.8V@3A,12mASaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJE172 PNP TO-126 80V 3A 12.5W
BD238 PNP TO-126 100V 1.5A 1W
BD140 NPN TO-126 80V 1.5A 1W
KTB1151-Y-U/PH PNP TO-126 60V 5A 20W
BD236STU-HXY PNP TO-126 60V 2A 1W
View all TO-126 PNP Transistors ›