BD682 Transistor Datasheet

- BJT | HXY MOSFET

-TO-252-2LGeneral Purpose
VCEO
100V
Ic Max
4A
Pd Max
2W
Gain
8000@2A,5V
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Quick Reference

The BD682 is a - bipolar transistor in a TO-252-2L package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 4A. This component is widely used in - switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-252-2LPhysical mounting form factor
VCEO100VBreakdown voltage
IC Max4ACollector current
Pd Max2WPower dissipation
Gain8000@2A,5VDC current gain
Frequency-Transition frequency
VCE(sat)1.8V@3A,12mASaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BD681 NPN TO-126 100V 4A 2W
View all TO-252-2L - Transistors ›