BD681 Transistor Datasheet

NPN BJT | YFW

NPNTO-126High Power
VCEO
100V
Ic Max
4A
Pd Max
40W
Gain
750
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Quick Reference

The BD681 is a NPN bipolar transistor in a TO-126 package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 4A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYFWOriginal Manufacturer
PackageTO-126Physical mounting form factor
VCEO100VBreakdown voltage
IC Max4ACollector current
Pd Max40WPower dissipation
Gain750DC current gain
Frequency-Transition frequency
VCE(sat)2.5V@1.5A,30mASaturation voltage
Vebo-Emitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BD140 NPN TO-126 80V 1.5A 1W
BD237STU-HXY NPN TO-126 100V 15A 1W
BD139 NPN TO-126 80V 1.5A 12.5W
KTD600K-Y-U/PH NPN TO-126 120V 1A 1.5W
BD441 NPN TO-126 80V 4A 25W
BD139-16 NPN SOT-32-3 80V 1.5A 12.5W
MJE182 NPN TO-126 80V 3A 12.5W
BD681 NPN TO-126 100V 4A 2W
BD13916STU-HXY NPN TO-126 80V 1.5A 1W
View all TO-126 NPN Transistors ›