DXT5551-13-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNSOT-89General Purpose
VCEO
-
Ic Max
160V
Pd Max
-
Gain
-
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Quick Reference

The DXT5551-13-HXY is a NPN bipolar transistor in a SOT-89 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 160V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO-Breakdown voltage
IC Max160VCollector current
Pd Max-Power dissipation
Gain-DC current gain
Frequency500mWTransition frequency
VCE(sat)300Saturation voltage
Vebo100MHzEmitter-Base voltage
Temp600mAOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BFU590Q NPN SOT-89 - 15V 200mA
LBTN180Y3T1G NPN SOT-89 - 80V 1A
2SD1664 NPN SOT-89-3L 32V 1A 500mW
2SC4672 NPN SOT-89 - 50V 2A
2SC2383 NPN SOT-89 160V 1A 500mW
2SC5569-TD-E NPN SOT-89 - 50V 7A
PXT3904-HXY NPN SOT-89 - 50V -
CXT3019TR-HXY NPN SOT-89 - 80V -
BSR43TA-HXY NPN SOT-89 - 80V -
2SD882 NPN TO-126 30V 3A 12.5W
View all SOT-89 NPN Transistors ›