FZT605 Transistor Datasheet

NPN BJT | DIODES

NPNSOT-223High Power
VCEO
120V
Ic Max
1.5A
Pd Max
3W
Gain
2000
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Quick Reference

The FZT605 is a NPN bipolar transistor in a SOT-223 package, designed for high power applications. It supports a breakdown voltage of 120V and continuous collector current of 1.5A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting form factor
VCEO120VBreakdown voltage
IC Max1.5ACollector current
Pd Max3WPower dissipation
Gain2000DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo150MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
FZT855TA NPN SOT-223 150V 5A 3W
FZT493TA NPN SOT-223 100V 1A 3W
FZT653TA NPN SOT-223 100V 2A 3W
FZT853TA NPN SOT-223 100V 6A 3W
CZT31C NPN SOT-223 100V 3A 1W
FZT694BTA NPN SOT-223 120V 1A 1.6W
FZT653QTA NPN SOT-223 100V 2A 1.2W
PZT1816G-S-AA3-R NPN SOT-223 100V 4A 1W
FZT605TA NPN SOT-223 120V 1.5A 2W
View all SOT-223 NPN Transistors ›