FZT855TA Transistor Datasheet

NPN BJT | DIODES

NPNSOT-223High Power
VCEO
150V
Ic Max
5A
Pd Max
3W
Gain
10
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Quick Reference

The FZT855TA is a NPN bipolar transistor in a SOT-223 package, designed for high power applications. It supports a breakdown voltage of 150V and continuous collector current of 5A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting form factor
VCEO150VBreakdown voltage
IC Max5ACollector current
Pd Max3WPower dissipation
Gain10DC current gain
Frequency10MHzTransition frequency
VCE(sat)110mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
CZT5551 TR NPN SOT-223 160V 600mA 2W
ZXTN5551GTA NPN SOT-223 160V 600mA 2W
CZT5551 NPN SOT-223 160V 600mA 1W
PZT5551-TP NPN SOT-223 160V 600mA 1W
DZT5551Q-13 NPN SOT-223 160V 600mA 2W
CZT5551-JSM NPN SOT-223 160V 600mA 2W
FZT694BTA NPN SOT-223 120V 1A 1.6W
CZT5551 NPN SOT-223 160V 600mA 1W
PZT5551G-B-AA3-R NPN SOT-223 160V 690mA 2W
DZT5551-13 NPN SOT-223 160V 600mA 2W
View all SOT-223 NPN Transistors ›