ZXTN5551GTA Transistor Datasheet

NPN BJT | DIODES

NPNSOT-223General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
2W
Gain
80
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Quick Reference

The ZXTN5551GTA is a NPN bipolar transistor in a SOT-223 package, designed for general purpose applications. It supports a breakdown voltage of 160V and continuous collector current of 600mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting form factor
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max2WPower dissipation
Gain80DC current gain
Frequency65MHzTransition frequency
VCE(sat)150mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
FZT855TA NPN SOT-223 150V 5A 3W
CZT5551 TR NPN SOT-223 160V 600mA 2W
CZT5551 NPN SOT-223 160V 600mA 1W
PZT5551-TP NPN SOT-223 160V 600mA 1W
DZT5551Q-13 NPN SOT-223 160V 600mA 2W
CZT5551-JSM NPN SOT-223 160V 600mA 2W
FZT694BTA NPN SOT-223 120V 1A 1.6W
CZT5551 NPN SOT-223 160V 600mA 1W
PZT5551G-B-AA3-R NPN SOT-223 160V 690mA 2W
DZT5551-13 NPN SOT-223 160V 600mA 2W
View all SOT-223 NPN Transistors ›