HCXT5551 Transistor Datasheet

NPN BJT | HXY MOSFET

NPNSOT-89General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
500mW
Gain
300
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Quick Reference

The HCXT5551 is a NPN bipolar transistor in a SOT-89 package, designed for general purpose applications. It supports a breakdown voltage of 160V and continuous collector current of 600mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max500mWPower dissipation
Gain300DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo100MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
DXT5551-13 NPN SOT-89 160V 600mA 1.2W
PXT5551 NPN SOT-89 160V 600mA 500mW
CXT5551 NPN SOT-89 160V 600mA 500mW
2SC2383 NPN SOT-89 160V 1A 500mW
ZXTN4004ZTA NPN SOT-89 150V 1A 2W
2SC2383-JSM NPN SOT-89 160V 1A 500mW
CXT5551-JSM NPN SOT-89 160V 600mA 500mW
2SD1007Q NPN SOT-89 120V 700mA 2W
2SD2211T100R NPN SOT-89 160V 1.5A 2W
2SC2383 NPN SOT-89 160V 1A 500mW
View all SOT-89 NPN Transistors ›