HMMBT5551T Transistor Datasheet

NPN BJT | HXY MOSFET

NPNSOT-523General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
300mW
Gain
100
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Quick Reference

The HMMBT5551T is a NPN bipolar transistor in a SOT-523 package, designed for general purpose applications. It supports a breakdown voltage of 160V and continuous collector current of 600mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-523Physical mounting form factor
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max300mWPower dissipation
Gain100DC current gain
Frequency300MHzTransition frequency
VCE(sat)200mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMBT5551T NPN SOT-523 160V 600mA 200mW
View all SOT-523 NPN Transistors ›