MMBT5551T Transistor Datasheet

NPN BJT | R+O

NPNSOT-523General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
200mW
Gain
300@10mA,5V
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Quick Reference

The MMBT5551T is a NPN bipolar transistor in a SOT-523 package, designed for general purpose applications. It supports a breakdown voltage of 160V and continuous collector current of 600mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-523Physical mounting form factor
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max200mWPower dissipation
Gain300@10mA,5VDC current gain
Frequency300MHzTransition frequency
VCE(sat)150mVSaturation voltage
Vebo-Emitter-Base voltage
Temp-55℃~+150℃@(Tj)Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
HMMBT5551T NPN SOT-523 160V 600mA 300mW
View all SOT-523 NPN Transistors ›