HMMDT39067F Transistor Datasheet

PNP BJT | HXY MOSFET

PNPSOT-363General Purpose
VCEO
-
Ic Max
40V
Pd Max
-
Gain
-
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Quick Reference

The HMMDT39067F is a PNP bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 40V. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO-Breakdown voltage
IC Max40VCollector current
Pd Max-Power dissipation
Gain-DC current gain
Frequency200mWTransition frequency
VCE(sat)100Saturation voltage
Vebo250MHzEmitter-Base voltage
Temp200mAOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMDT2907A PNP SOT-363 - 60V 600mA
HMMDT54017F PNP SOT-363 - 150V -
MMDT3906DW PNP SOT-363 40V 200mA 200mW
BC856S PNP SOT-363 - 65V -
UMT1N PNP SOT-363 - 50V -
BC857BDW PNP SOT-363 - 45V 200mA
MMDT3906 PNP SOT-363 40V 200mA 200mW
UMT1N PNP SOT-363 - 50V -
MMDT5401 PNP SOT-363 150V 200mA 200mW
View all SOT-363 PNP Transistors ›