UMT1N Transistor Datasheet

PNP BJT | YANGJIE

PNPSOT-363General Purpose
VCEO
-
Ic Max
50V
Pd Max
150mA
Gain
-55℃~+150℃
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Quick Reference

The UMT1N is a PNP bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 50V. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYANGJIEOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO-Breakdown voltage
IC Max50VCollector current
Pd Max150mAPower dissipation
Gain-55℃~+150℃DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo140MHzEmitter-Base voltage
Temp200mWOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMDT2907A PNP SOT-363 - 60V 600mA
HMMDT39067F PNP SOT-363 - 40V -
HMMDT54017F PNP SOT-363 - 150V -
MMDT3906DW PNP SOT-363 40V 200mA 200mW
BC856S PNP SOT-363 - 65V -
BC857BDW PNP SOT-363 - 45V 200mA
MMDT3906 PNP SOT-363 40V 200mA 200mW
UMT1N PNP SOT-363 - 50V -
MMDT5401 PNP SOT-363 150V 200mA 200mW
View all SOT-363 PNP Transistors ›