MJ1000 Transistor Datasheet

NPN BJT | SPTECH

NPNTO-3High Power
VCEO
60V
Ic Max
10A
Pd Max
90W
Gain
1000
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The MJ1000 is a NPN bipolar transistor in a TO-3 package, designed for high power applications. It supports a breakdown voltage of 60V and continuous collector current of 10A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting form factor
VCEO60VBreakdown voltage
IC Max10ACollector current
Pd Max90WPower dissipation
Gain1000DC current gain
Frequency-Transition frequency
VCE(sat)4VSaturation voltage
Vebo-Emitter-Base voltage
Temp-55℃~+200℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJ3055 NPN TO-3 60V 10A 117W
2N3772 NPN TO-3 60V 20A 150W
2N5302 NPN TO-3 60V 30A 200W
2N5685 NPN TO-3 60V 50A 300W
2N3055A NPN TO-3 60V 15A 115W
2SD211 NPN TO-3 60V 10A 100W
2SC1777 NPN TO-3 70V 6A 50W
2SC681 NPN TO-3 70V 6A 50W
View all TO-3 NPN Transistors ›