MJ3055 Transistor Datasheet

NPN BJT | SPTECH

NPNTO-3High Power
VCEO
60V
Ic Max
10A
Pd Max
117W
Gain
70
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Quick Reference

The MJ3055 is a NPN bipolar transistor in a TO-3 package, designed for high power applications. It supports a breakdown voltage of 60V and continuous collector current of 10A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting form factor
VCEO60VBreakdown voltage
IC Max10ACollector current
Pd Max117WPower dissipation
Gain70DC current gain
Frequency2MHzTransition frequency
VCE(sat)3VSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+200℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2N3772 NPN TO-3 60V 20A 150W
2N5302 NPN TO-3 60V 30A 200W
2N5685 NPN TO-3 60V 50A 300W
2N3055A NPN TO-3 60V 15A 115W
2SD211 NPN TO-3 60V 10A 100W
2SC1777 NPN TO-3 70V 6A 50W
MJ1000 NPN TO-3 60V 10A 90W
2SC681 NPN TO-3 70V 6A 50W
View all TO-3 NPN Transistors ›