MJ11030 Transistor Datasheet

NPN BJT | SPTECH

NPNTO-3High Power
VCEO
90V
Ic Max
50A
Pd Max
300W
Gain
18000
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The MJ11030 is a NPN bipolar transistor in a TO-3 package, designed for high power applications. It supports a breakdown voltage of 90V and continuous collector current of 50A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting form factor
VCEO90VBreakdown voltage
IC Max50ACollector current
Pd Max300WPower dissipation
Gain18000DC current gain
Frequency-Transition frequency
VCE(sat)3.5VSaturation voltage
Vebo-Emitter-Base voltage
Temp-55℃~+200℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BD317 NPN TO-3 100V 16A 200W
2SD750 NPN TO-3 80V 15A 100W
2SC1777 NPN TO-3 70V 6A 50W
2N5886 NPN TO-3 80V 25A 200W
2N6338 NPN TO-3 100V 25A 200W
2N5038 NPN TO-3 90V 20A 140W
3DD303C NPN TO-3 100V 3A 30W
2SC681 NPN TO-3 70V 6A 50W
MJ3001 NPN TO-3 80V 10A 150W
View all TO-3 NPN Transistors ›