3DD303C Transistor Datasheet

NPN BJT | SPTECH

NPNTO-3High Power
VCEO
100V
Ic Max
3A
Pd Max
30W
Gain
120
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Quick Reference

The 3DD303C is a NPN bipolar transistor in a TO-3 package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 3A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting form factor
VCEO100VBreakdown voltage
IC Max3ACollector current
Pd Max30WPower dissipation
Gain120DC current gain
Frequency-Transition frequency
VCE(sat)1.5VSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJ15015G NPN TO-3 120V 15A 180W
BDY58 NPN TO-3 125V 25A 175W
BD317 NPN TO-3 100V 16A 200W
2SD750 NPN TO-3 80V 15A 100W
2SC1116 NPN TO-3 120V 10A 100W
2SC1777 NPN TO-3 70V 6A 50W
2N5886 NPN TO-3 80V 25A 200W
2N6338 NPN TO-3 100V 25A 200W
2N5038 NPN TO-3 90V 20A 140W
MJ11030 NPN TO-3 90V 50A 300W
View all TO-3 NPN Transistors ›