MJD112-1G Transistor Datasheet

NPN BJT | onsemi

NPNDPAKGeneral Purpose
VCEO
100V
Ic Max
2A
Pd Max
1.75W
Gain
1000
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Quick Reference

The MJD112-1G is a NPN bipolar transistor in a DPAK package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 2A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageDPAKPhysical mounting form factor
VCEO100VBreakdown voltage
IC Max2ACollector current
Pd Max1.75WPower dissipation
Gain1000DC current gain
Frequency25MHzTransition frequency
VCE(sat)3VSaturation voltage
Vebo-Emitter-Base voltage
Temp-65℃~+150℃@(Tj)Operating temperature range

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