NJVMJD44H11T4G Transistor Datasheet

NPN BJT | onsemi

NPNDPAKHigh Power
VCEO
80V
Ic Max
8A
Pd Max
20W
Gain
40
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Quick Reference

The NJVMJD44H11T4G is a NPN bipolar transistor in a DPAK package, designed for high power applications. It supports a breakdown voltage of 80V and continuous collector current of 8A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageDPAKPhysical mounting form factor
VCEO80VBreakdown voltage
IC Max8ACollector current
Pd Max20WPower dissipation
Gain40DC current gain
Frequency85MHzTransition frequency
VCE(sat)1VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD31CAJ NPN DPAK 100V 3A 15W
NJVMJD122T4G NPN DPAK 100V 8A 1.75W
MJD112-1G NPN DPAK 100V 2A 1.75W
MJD44H11T4 NPN DPAK 80V 8A 20W
MJD41CJ NPN DPAK 100V 6A 15W
MJD44H11A NPN DPAK 80V 8A 20W
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