MJD112 Transistor Datasheet

NPN BJT | JSCJ

NPNTO-252-2LGeneral Purpose
VCEO
100V
Ic Max
2A
Pd Max
1W
Gain
12000
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Quick Reference

The MJD112 is a NPN bipolar transistor in a TO-252-2L package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 2A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageTO-252-2LPhysical mounting form factor
VCEO100VBreakdown voltage
IC Max2ACollector current
Pd Max1WPower dissipation
Gain12000DC current gain
Frequency25MHzTransition frequency
VCE(sat)3V@4A,40mASaturation voltage
Vebo-Emitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SD1815(RANGE:100-200) NPN TO-252-2L 100V 3A 1W
MJD31C NPN TO-252 100V 3A 1.56W
MJD41C NPN TO-252-2L 100V 3A 1W
MJD41C NPN TO-252-2L 100V 3A 1W
MJD122 NPN TO-252-2L 100V 8A 1.5W
MJD31C NPN TO-252 100V 3A 1.56W
View all TO-252-2L NPN Transistors ›