MJD31C Transistor Datasheet

NPN BJT | HXY MOSFET

NPNTO-252-2LGeneral Purpose
VCEO
100V
Ic Max
3A
Pd Max
1.25W
Gain
75
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Quick Reference

The MJD31C is a NPN bipolar transistor in a TO-252-2L package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 3A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-252-2LPhysical mounting form factor
VCEO100VBreakdown voltage
IC Max3ACollector current
Pd Max1.25WPower dissipation
Gain75DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo3MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SD1815(RANGE:100-200) NPN TO-252-2L 100V 3A 1W
MJD41C NPN TO-252-2L 100V 3A 1W
MJD41C NPN TO-252-2L 100V 3A 1W
MJD122 NPN TO-252-2L 100V 8A 1.5W
MJD112 NPN TO-252-2L 100V 2A 1W
MJD31C NPN TO-252 100V 3A 1.56W
View all TO-252-2L NPN Transistors ›