MJD127T4G(MS) Transistor Datasheet

PNP BJT | MSKSEMI

PNPTO-252General Purpose
VCEO
100V
Ic Max
8A
Pd Max
1.5W
Gain
12000
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Quick Reference

The MJD127T4G(MS) is a PNP bipolar transistor in a TO-252 package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 8A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageTO-252Physical mounting form factor
VCEO100VBreakdown voltage
IC Max8ACollector current
Pd Max1.5WPower dissipation
Gain12000DC current gain
Frequency-Transition frequency
VCE(sat)4VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD42CRLG PNP TO-252 100V 6A 1.75W
MJD42CT4G(MS) PNP TO-252 100V 6A 1.25W
MJD42C PNP TO-252-2L 100V 3A 1W
BRMJE172D PNP TO-252 80V 6A 12.5W
MJD127T4G-JSM PNP TO-252 100V 8A 1.75W
MJD127 PNP TO-252-2L 100V 8A 1.5W
MJD45H11 PNP TO-252(DPAK) 80V 8A 20W
View all TO-252 PNP Transistors ›