MJD45H11 Transistor Datasheet

PNP BJT | GOODWORK

PNPTO-252High Power
VCEO
80V
Ic Max
8A
Pd Max
20W
Gain
60
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The MJD45H11 is a PNP bipolar transistor in a TO-252 package, designed for high power applications. It supports a breakdown voltage of 80V and continuous collector current of 8A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerGOODWORKOriginal Manufacturer
PackageTO-252Physical mounting form factor
VCEO80VBreakdown voltage
IC Max8ACollector current
Pd Max20WPower dissipation
Gain60DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD42CRLG PNP TO-252 100V 6A 1.75W
MJD42CT4G(MS) PNP TO-252 100V 6A 1.25W
MJD42C PNP TO-252-2L 100V 3A 1W
BRMJE172D PNP TO-252 80V 6A 12.5W
MJD127T4G(MS) PNP TO-252 100V 8A 1.5W
MJD127T4G-JSM PNP TO-252 100V 8A 1.75W
MJD127 PNP TO-252-2L 100V 8A 1.5W
View all TO-252 PNP Transistors ›