MJD3055T4G Transistor Datasheet

NPN BJT | onsemi

NPNTO-252(DPAK)High Power
VCEO
60V
Ic Max
10A
Pd Max
20W
Gain
20
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Quick Reference

The MJD3055T4G is a NPN bipolar transistor in a TO-252(DPAK) package, designed for high power applications. It supports a breakdown voltage of 60V and continuous collector current of 10A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting form factor
VCEO60VBreakdown voltage
IC Max10ACollector current
Pd Max20WPower dissipation
Gain20DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo2MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
NJD2873T4G NPN TO-252(DPAK) 50V 2A 15W
STD1802T4 NPN TO-252(DPAK) 60V 3A 15W
ZXT690BKTC NPN TO-252(DPAK) 45V 3A 4W
View all TO-252(DPAK) NPN Transistors ›