NJD2873T4G Transistor Datasheet

NPN BJT | onsemi

NPNTO-252(DPAK)High Power
VCEO
50V
Ic Max
2A
Pd Max
15W
Gain
120
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Quick Reference

The NJD2873T4G is a NPN bipolar transistor in a TO-252(DPAK) package, designed for high power applications. It supports a breakdown voltage of 50V and continuous collector current of 2A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting form factor
VCEO50VBreakdown voltage
IC Max2ACollector current
Pd Max15WPower dissipation
Gain120DC current gain
Frequency65MHzTransition frequency
VCE(sat)300mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65℃~+175℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
STD1802T4 NPN TO-252(DPAK) 60V 3A 15W
ZXT690BKTC NPN TO-252(DPAK) 45V 3A 4W
MJD31T4G NPN TO-252(DPAK) 40V 3A 15W
MJD3055T4G NPN TO-252(DPAK) 60V 10A 20W
View all TO-252(DPAK) NPN Transistors ›