MJD31CJ Transistor Datasheet

NPN BJT | Nexperia

NPNDPAKHigh Power
VCEO
-
Ic Max
100V
Pd Max
3A
Gain
-55℃~+150℃
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Quick Reference

The MJD31CJ is a NPN bipolar transistor in a DPAK package, designed for high power applications. It supports a breakdown voltage of - and continuous collector current of 100V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageDPAKPhysical mounting form factor
VCEO-Breakdown voltage
IC Max100VCollector current
Pd Max3APower dissipation
Gain-55℃~+150℃DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo3MHzEmitter-Base voltage
Temp1.6WOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
NJVMJD31CG NPN DPAK - 100V 3A
MJD44H11J NPN DPAK - 80V 8A
View all DPAK NPN Transistors ›