MJD44H11J Transistor Datasheet

NPN BJT | Nexperia

NPNDPAKHigh Power
VCEO
-
Ic Max
80V
Pd Max
8A
Gain
-55℃~+150℃
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Quick Reference

The MJD44H11J is a NPN bipolar transistor in a DPAK package, designed for high power applications. It supports a breakdown voltage of - and continuous collector current of 80V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageDPAKPhysical mounting form factor
VCEO-Breakdown voltage
IC Max80VCollector current
Pd Max8APower dissipation
Gain-55℃~+150℃DC current gain
Frequency-Transition frequency
VCE(sat)160MHzSaturation voltage
Vebo-Emitter-Base voltage
Temp20WOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
NJVMJD31CG NPN DPAK - 100V 3A
MJD31CJ NPN DPAK - 100V 3A
View all DPAK NPN Transistors ›