MJD45H11T4 Transistor Datasheet

PNP BJT | ST

PNPDPAKHigh Power
VCEO
80V
Ic Max
8A
Pd Max
20W
Gain
40
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Quick Reference

The MJD45H11T4 is a PNP bipolar transistor in a DPAK package, designed for high power applications. It supports a breakdown voltage of 80V and continuous collector current of 8A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageDPAKPhysical mounting form factor
VCEO80VBreakdown voltage
IC Max8ACollector current
Pd Max20WPower dissipation
Gain40DC current gain
Frequency-Transition frequency
VCE(sat)1VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
STD2805T4 PNP DPAK 60V 5A 15W
KTA1385D-Y-RTF/P PNP DPAK 60V 5A 15W
MJD45H11RLG PNP DPAK 80V 8A 20W
NJVMJD32CT4G-VF01 PNP DPAK 100V 3A 15W
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