NJVMJD32CT4G-VF01 Transistor Datasheet

PNP BJT | onsemi

PNPDPAKHigh Power
VCEO
100V
Ic Max
3A
Pd Max
15W
Gain
10
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Quick Reference

The NJVMJD32CT4G-VF01 is a PNP bipolar transistor in a DPAK package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 3A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageDPAKPhysical mounting form factor
VCEO100VBreakdown voltage
IC Max3ACollector current
Pd Max15WPower dissipation
Gain10DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo3MHzEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD45H11T4 PNP DPAK 80V 8A 20W
MJD45H11RLG PNP DPAK 80V 8A 20W
View all DPAK PNP Transistors ›