MJE15032G Transistor Datasheet

NPN BJT | onsemi

NPNTO-220High Power
VCEO
250V
Ic Max
8A
Pd Max
50W
Gain
70
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Quick Reference

The MJE15032G is a NPN bipolar transistor in a TO-220 package, designed for high power applications. It supports a breakdown voltage of 250V and continuous collector current of 8A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting form factor
VCEO250VBreakdown voltage
IC Max8ACollector current
Pd Max50WPower dissipation
Gain70DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo30MHzEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJE15032G NPN TO-220 250V 8A 50W
View all TO-220 NPN Transistors ›