MJE15035G Transistor Datasheet

PNP BJT | onsemi

PNPTO-220High Power
VCEO
350V
Ic Max
4A
Pd Max
50W
Gain
100

Quick Reference

The MJE15035G is a PNP bipolar transistor in a TO-220 package, designed for high power applications. It supports a breakdown voltage of 350V and continuous collector current of 4A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting form factor
VCEO350VBreakdown voltage
IC Max4ACollector current
Pd Max50WPower dissipation
Gain100DC current gain
Frequency30MHzTransition frequency
VCE(sat)500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJE5852G PNP TO-220 400V 8A 80W
MJE15033G PNP TO-220 250V 8A 50W
View all TO-220 PNP Transistors โ€บ