MJE5852G Transistor Datasheet

PNP BJT | onsemi

PNPTO-220High Power
VCEO
400V
Ic Max
8A
Pd Max
80W
Gain
5
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Quick Reference

The MJE5852G is a PNP bipolar transistor in a TO-220 package, designed for high power applications. It supports a breakdown voltage of 400V and continuous collector current of 8A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting form factor
VCEO400VBreakdown voltage
IC Max8ACollector current
Pd Max80WPower dissipation
Gain5DC current gain
Frequency-Transition frequency
VCE(sat)5VSaturation voltage
Vebo6VEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJE15035G PNP TO-220 350V 4A 50W
View all TO-220 PNP Transistors ›