MMBTA42LT1G Transistor Datasheet

NPN BJT | onsemi

NPNSOT-23General Purpose
VCEO
300V
Ic Max
500mA
Pd Max
225mW
Gain
25
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The MMBTA42LT1G is a NPN bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 300V and continuous collector current of 500mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO300VBreakdown voltage
IC Max500mACollector current
Pd Max225mWPower dissipation
Gain25DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
DN350T05-7 NPN SOT-23 350V 500mA 300mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 225mW
MMBTA42-7-F NPN SOT-23 300V 500mA 300mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
S-MMBTA42LT1G NPN SOT-23 300V 500mA 350mW
View all SOT-23 NPN Transistors ›