MMDT5401G Transistor Datasheet

NPN+PNP BJT | LGE

NPN+PNPSOT-363General Purpose
VCEO
150V
Ic Max
200mA
Pd Max
200mW
Gain
60
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Quick Reference

The MMDT5401G is a NPN+PNP bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of 150V and continuous collector current of 200mA. This component is widely used in NPN+PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO150VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain60DC current gain
Frequency100MHzTransition frequency
VCE(sat)500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMDT5451 NPN+PNP SOT-363 160V 200mA 200mW
TPMMDT5551 NPN+PNP SOT-363 160V 200mA 200mW
MMDT5451 NPN+PNP SOT-363 160V 200mA 200mW
MMDT5451 NPN+PNP SOT-363 160V 200mA 200mW
MMBT5451DW NPN+PNP SOT-363 160V 200mA 200mW
MMDT5551 NPN SOT-363 160V 200mA 200mW
View all SOT-363 NPN+PNP Transistors ›