TPMMDT5551 Transistor Datasheet

NPN+PNP BJT | TECH PUBLIC

NPN+PNPSOT-363General Purpose
VCEO
160V
Ic Max
200mA
Pd Max
200mW
Gain
80
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Quick Reference

The TPMMDT5551 is a NPN+PNP bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of 160V and continuous collector current of 200mA. This component is widely used in NPN+PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO160VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain80DC current gain
Frequency100MHzTransition frequency
VCE(sat)150mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMDT5451 NPN+PNP SOT-363 160V 200mA 200mW
MMDT5451 NPN+PNP SOT-363 160V 200mA 200mW
MMDT5451 NPN+PNP SOT-363 160V 200mA 200mW
MMBT5451DW NPN+PNP SOT-363 160V 200mA 200mW
MMDT5551 NPN SOT-363 160V 200mA 200mW
MMDT5401G NPN+PNP SOT-363 150V 200mA 200mW
View all SOT-363 NPN+PNP Transistors ›