NSS1C200LT1G Transistor Datasheet

PNP BJT | onsemi

PNPSOT-23General Purpose
VCEO
100V
Ic Max
2A
Pd Max
710mW
Gain
360
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Quick Reference

The NSS1C200LT1G is a PNP bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 2A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO100VBreakdown voltage
IC Max2ACollector current
Pd Max710mWPower dissipation
Gain360DC current gain
Frequency120MHzTransition frequency
VCE(sat)115mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
MMBTA56-7-F PNP SOT-23 80V 500mA 350mW
SMMBTA56LT1G PNP SOT-23 80V 500mA 300mW
MMBTA56LT3G PNP SOT-23 80V 500mA 225mW
SMMBTA56LT3G PNP SOT-23 80V 500mA 300mW
PMBTA56-HXY PNP SOT-23 80V 500mA 225mW
MMBTA56LT1G PNP SOT-23 80V 500mA 225mW
CMPTA56-HXY PNP SOT-23 80V 500mA 225mW
FMMTA56TA-HXY PNP SOT-23 80V 500mA 225mW
MMBTA56 PNP SOT-23 80V 500mA 225mW
View all SOT-23 PNP Transistors ›