PBSS5130T,215 Transistor Datasheet

PNP BJT | Nexperia

PNPSOT-23General Purpose
VCEO
-
Ic Max
30V
Pd Max
1A
Gain
-55โ„ƒ~+150โ„ƒ

Quick Reference

The PBSS5130T,215 is a PNP bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 30V. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO-Breakdown voltage
IC Max30VCollector current
Pd Max1APower dissipation
Gain-55โ„ƒ~+150โ„ƒDC current gain
Frequency-Transition frequency
VCE(sat)200MHzSaturation voltage
Vebo-Emitter-Base voltage
Temp480mWOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
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MMBTA92 PNP SOT-23 300V 500mA 300mW
MMBT4403 PNP SOT-23 40V 600mA 300mW
BC807-16 PNP SOT-23 45V 500mA 300mW
MMBT5401LT1G-CN PNP SOT-23 - 150V 600mA
BCW68H PNP SOT-23 - 60V 800mA
View all SOT-23 PNP Transistors โ€บ