SMMBTA56LT3G-HXY Transistor Datasheet

PNP BJT | HXY MOSFET

PNPSOT-23General Purpose
VCEO
-
Ic Max
80V
Pd Max
-
Gain
-
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Quick Reference

The SMMBTA56LT3G-HXY is a PNP bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 80V. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO-Breakdown voltage
IC Max80VCollector current
Pd Max-Power dissipation
Gain-DC current gain
Frequency225mWTransition frequency
VCE(sat)400Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp500mAOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
FMMTA92QTA PNP SOT-23 - 300V 200mA
BC807-40-7-F PNP SOT-23 - 45V 500mA
BC858BLT3G PNP SOT-23 - 30V 100mA
MMBTA63LT1G PNP SOT-23 - 500mA 225mW
S9012 PNP SOT-23 25V 500mA 300mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
MMBT4403 PNP SOT-23 40V 600mA 300mW
BC807-16 PNP SOT-23 45V 500mA 300mW
MMBT5401LT1G-CN PNP SOT-23 - 150V 600mA
BCW68H PNP SOT-23 - 60V 800mA
View all SOT-23 PNP Transistors ›