H2SD1898T100R Transistor Datasheet

NPN BJT | HXY MOSFET

NPNSOT-89General Purpose
VCEO
80V
Ic Max
1A
Pd Max
500mW
Gain
390
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The H2SD1898T100R is a NPN bipolar transistor in a SOT-89 package, designed for general purpose applications. It supports a breakdown voltage of 80V and continuous collector current of 1A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO80VBreakdown voltage
IC Max1ACollector current
Pd Max500mWPower dissipation
Gain390DC current gain
Frequency100MHzTransition frequency
VCE(sat)400mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BCX56-16 NPN SOT-89 80V 1A 1.3W
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
BCX56-16 NPN SOT-89 80V 1A 1.3W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W
BCX56 NPN SOT-89 80V 1A 1.3W
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W
BCX55-16 NPN SOT-89 60V 1A 1.3W
BCX56-16 NPN SOT-89 80V 1A 1.3W
View all SOT-89 NPN Transistors ›