2SA1962OTU Transistor Datasheet

PNP BJT | onsemi

PNPTO-3PHigh Power
VCEO
250V
Ic Max
17A
Pd Max
130W
Gain
55
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Quick Reference

The 2SA1962OTU is a PNP bipolar transistor in a TO-3P package, designed for high power applications. It supports a breakdown voltage of 250V and continuous collector current of 17A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-3PPhysical mounting form factor
VCEO250VBreakdown voltage
IC Max17ACollector current
Pd Max130WPower dissipation
Gain55DC current gain
Frequency30MHzTransition frequency
VCE(sat)400mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-50℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
NJW0302G PNP TO-3P 250V 15A 150W
NJW21193G PNP TO-3P 250V 16A 200W
TTA1943(Q) PNP TO-3P 230V 15A 150W
View all TO-3P PNP Transistors ›