NJW21193G Transistor Datasheet

PNP BJT | onsemi

PNPTO-3PHigh Power
VCEO
250V
Ic Max
16A
Pd Max
200W
Gain
20
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Quick Reference

The NJW21193G is a PNP bipolar transistor in a TO-3P package, designed for high power applications. It supports a breakdown voltage of 250V and continuous collector current of 16A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-3PPhysical mounting form factor
VCEO250VBreakdown voltage
IC Max16ACollector current
Pd Max200WPower dissipation
Gain20DC current gain
Frequency4MHzTransition frequency
VCE(sat)1.4VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
NJW0302G PNP TO-3P 250V 15A 150W
2SA1962OTU PNP TO-3P 250V 17A 130W
TTA1943(Q) PNP TO-3P 230V 15A 150W
View all TO-3P PNP Transistors ›