TTA1943(Q) Transistor Datasheet

PNP BJT | TOSHIBA

PNPTO-3PHigh Power
VCEO
230V
Ic Max
15A
Pd Max
150W
Gain
80
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Quick Reference

The TTA1943(Q) is a PNP bipolar transistor in a TO-3P package, designed for high power applications. It supports a breakdown voltage of 230V and continuous collector current of 15A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageTO-3PPhysical mounting form factor
VCEO230VBreakdown voltage
IC Max15ACollector current
Pd Max150WPower dissipation
Gain80DC current gain
Frequency30MHzTransition frequency
VCE(sat)3VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
NJW0302G PNP TO-3P 250V 15A 150W
2SA1962OTU PNP TO-3P 250V 17A 130W
NJW21193G PNP TO-3P 250V 16A 200W
View all TO-3P PNP Transistors ›