BDY58 Transistor Datasheet

NPN BJT | SPTECH

NPNTO-3High Power
VCEO
125V
Ic Max
25A
Pd Max
175W
Gain
60
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Quick Reference

The BDY58 is a NPN bipolar transistor in a TO-3 package, designed for high power applications. It supports a breakdown voltage of 125V and continuous collector current of 25A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting form factor
VCEO125VBreakdown voltage
IC Max25ACollector current
Pd Max175WPower dissipation
Gain60DC current gain
Frequency10MHzTransition frequency
VCE(sat)1.4VSaturation voltage
Vebo10VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJ15015G NPN TO-3 120V 15A 180W
2N5631 NPN TO-3 140V 16A 200W
BD317 NPN TO-3 100V 16A 200W
2SC1116 NPN TO-3 120V 10A 100W
2N6338 NPN TO-3 100V 25A 200W
2N5038 NPN TO-3 90V 20A 140W
MJ11030 NPN TO-3 90V 50A 300W
MJ15015 NPN TO-3 120V 15A 180W
3DD303C NPN TO-3 100V 3A 30W
MJ11032 NPN TO-3 120V 50A 300W
View all TO-3 NPN Transistors ›