BD139G Transistor Datasheet

NPN BJT | onsemi

NPNTO-225-3High Power
VCEO
80V
Ic Max
1.5A
Pd Max
12.5W
Gain
25
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Quick Reference

The BD139G is a NPN bipolar transistor in a TO-225-3 package, designed for high power applications. It supports a breakdown voltage of 80V and continuous collector current of 1.5A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-225-3Physical mounting form factor
VCEO80VBreakdown voltage
IC Max1.5ACollector current
Pd Max12.5WPower dissipation
Gain25DC current gain
Frequency-Transition frequency
VCE(sat)500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2N4922G NPN TO-225-3 60V 1A 30W
BD681G NPN TO-225-3 100V 4A 40W
MJE243G NPN TO-225-3 100V 4A 15W
MJE182G NPN TO-225-3 100V 3A 12.5W
View all TO-225-3 NPN Transistors ›